Comprehensive comparison on optical properties of samarium oxide (micro/nano) particles doped tellurite glass for optoelectronics applications

Optical Properties of Ho3+ Doped in Tellurite Glass

We visit the standard procedure for analyzing the optical spectrum of Ho doped tellurite glass has been studied. The glass was formed using a composition 79% Te O2 + 20% Li2 CO2 + 1% Ho O2. I density and refractive index were measured and used to calculate various physical properties such as, rare earth concentration, mean atomic volume, electric polarization, ionic radius, molar refractivity, ...

Optical Properties of Bismuth Tellurite Based Glass

A series of binary tellurite based glasses (Bi(2)O(3))(x) (TeO(2))(100-) (x) was prepared by melt quenching method. The density, molar volume and refractive index increase when bismuth ions Bi(3+) increase, this is due to the increased polarization of the ions Bi(3+) and the enhanced formation of non-bridging oxygen (NBO). The Fourier transform infrared spectroscopy (FTIR) results show the bond...

Optical properties and frequency upconversion fluorescence in a Tm3+ -doped alkali niobium tellurite glass

Sensing properties of germanate and tellurite glass optical fibres

Strain and thermal sensitivities of germanate and tellurite glass fibres were measured using a fibre Fabry-Perot (FFP) interferometer and fibre Bragg gratings (FBG). The strain phase sensitivity for germanate and tellurite fibre were 5900×10 rad/m and 5600×10 rad/m respectively at a central wavelength of 1540nm using FFP interferometer, which is consistent with the value of 1.22pm/με obtained f...

Zinc oxide and gallium doped zinc oxide nanowires for optoelectronics

Zinc oxide (ZnO) nanostructures are become an important matter of study since they can be used in nanoscale optoelectronics for applications such as memory storage, logic circuits, solid-state gas-, bioor light-sensors, solar cells, field effect transistors, field effect displays, and short wavelength light emitting diodes. ZnO is a semiconductor with a direct and wide band-gap around 3.4 eV, a...